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BU323 Datasheet

Silicon Darlington NPN Power Transistor

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isc Silicon Darlington NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.)
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Automotive ignition
·Switching regulator
·Motor control applications
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current-Peak
16
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
3
A
175
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0 /W
BU323
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BU323 Datasheet Preview

BU323 Datasheet

Silicon Darlington NPN Power Transistor

No Preview Available !

isc Silicon Darlington NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1
VCE(sat)-2
VCE(sat)-3
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC= 3A; IB= 60mA
IC= 6 A; IB= 120mA
IC= 10 A; IB= 300mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 6 A; IB= 120mA
VBE(sat)-2
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC= 10 A; IB= 300mA
IC= 10A ; VCE= 6V
ICBO
Collector Cutoff Current
VCB= RatedVCBO; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 6V
hFE-2
DC Current Gain
IC= 6A; VCE= 6V
hFE-3
DC Current Gain
IC= 10A; VCE= 6V
VECF
C-E Diode Forward Voltage
IF= 10A
COB
Output Capacitance
IE= 0; VCB= 10V; f= 100kHz
Switching Times
ts
Storage Time
tf
Fall Time
VCC= 12V; IC= 6A,
IB1= -IB2= 0.3A
BU323
MIN TYP MAX UNIT
350
V
1.5
V
1.7
V
2.7
V
2.2
V
3.0
V
2.5
V
1.0 mA
40
mA
300
150
2000
50
3.5
V
165
pF
15
μs
15
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BU323
Description Silicon Darlington NPN Power Transistor
Maker Inchange Semiconductor
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