Datasheet Details
| Part number | BU323 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.36 KB |
| Description | Silicon Darlington NPN Power Transistor |
| Download | BU323 Download (PDF) |
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| Part number | BU323 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.36 KB |
| Description | Silicon Darlington NPN Power Transistor |
| Download | BU323 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 175 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W BU323 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon Darlington NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC= 3A;
IB= 60mA IC= 6 A;
isc Silicon Darlington NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU323A | 16 AMPERE PEAK POWER TRANSISTOR | Motorola Inc |
 |
BU323A | NPN Transistor | INCHANGE |
 |
BU323A | SILICON POWER TRANSISTOR | SavantIC |
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BU323AP | DARLINGTON NPN SILICON POWER TRANSISTOR | Motorola Inc |
|
BU323AP | NPN Transistor | INCHANGE |
| Part Number | Description |
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