Datasheet Details
| Part number | BU433 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.31 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU433 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU433 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.31 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU433 Download (PDF) |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 375V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in the switch-mode power supply of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 800 V VCEO Collector-Emitter Voltage 375 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.1 ℃/W BU433 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU433 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A;
IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BU433 | Transistor | Semelab PLC |
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