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BU4522AF Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and PC monitors.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage VALUE 1500 800 7.5 10 UNIT V V Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak w ww s c s .i V A 25 6 9 45 150 -55~150 A A A W ℃ ℃ n c .

i m e IBM PC TJ Tstg Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4522AF TYP.

Overview

INCHANGE Semiconductor isc Product Specification www.DataSheet4U.