BU508A-M - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) High Power Dissipation- : PD= 100W@TC= 25℃ APPLICATIONS

Designed for horizontal output applications.

Inchange Semiconductor

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Datasheet Details

Part number	BU508A-M
Manufacturer	Inchange Semiconductor
File Size	200.29 KB
Description	Silicon NPN Power Transistor
Datasheet	BU508A-M Datasheet
Additional preview pages of the BU508A-M datasheet.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 5A ICM Collector Current-Peak 16 A IB Base Current- Continuous 4A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6A 100 W 150 ℃ -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.

Published: Jun 26, 2016 |