BU508AT - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Power Dissipation- : PD= 100W@TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits.

Inchange Semiconductor

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Datasheet Details

Part number	BU508AT
Manufacturer	Inchange Semiconductor
File Size	211.12 KB
Description	Silicon NPN Power Transistor
Datasheet	BU508AT Datasheet
Additional preview pages of the BU508AT datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor BU508AT DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits.

Published: Jun 26, 2016 |