BU522 Datasheet - Inchange Semiconductor

Silicon Darlington NPN Power Transistor

BU522 General Description

*High Voltage *Low Collector Saturation Voltage- : VCE(sat)= 2.5V @ IC= 4A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(.

BU522 Datasheet (211.35 KB)

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BU522

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Inchange Semiconductor

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211.35 KB

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Silicon darlington npn power transistor.

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BU522 Silicon Darlington NPN Power Transistor Inchange Semiconductor

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BU522 General Description

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