Datasheet Details
| Part number | BU522A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.35 KB |
| Description | Silicon Darlington NPN Power Transistor |
| Download | BU522A Download (PDF) |
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Overview: isc Silicon Darlington NPN Power Transistor BU522A.
| Part number | BU522A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.35 KB |
| Description | Silicon Darlington NPN Power Transistor |
| Download | BU522A Download (PDF) |
|
|
|
·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in ignition circuit.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 400 V VCER Collector-Emitter Voltage 425 V VCBO Collector-Base Voltage 450 V VEBO Emitter-Base Voltage 5 V IC Collector Current 7 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon Darlington NPN Power Transistor BU522A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCER(SUS) Collector-Emitter Sustaining Voltage IC=50mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU522A | POWER TRANSISTORS | Motorola |
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BU522 | POWER TRANSISTORS | Motorola |
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BU52272NUZ | Omnipolar Detection Hall | ROHM |
|
BU52273NUZ | Omnipolar Detection Hall | ROHM |
|
BU52274NUZ | Omnipolar Detection Hall | ROHM |
| Part Number | Description |
|---|---|
| BU522 | Silicon Darlington NPN Power Transistor |
| BU508A-2 | Silicon NPN Power Transistor |
| BU508A-M | Silicon NPN Power Transistor |
| BU508AT | Silicon NPN Power Transistor |