Datasheet Details
| Part number | BU607D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.48 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU607D Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU607D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.48 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU607D Download (PDF) |
|
|
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·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU607D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU607D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.65A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
| Part Number | Description |
|---|---|
| BU607 | Silicon NPN Power Transistor |
| BU606 | Silicon NPN Power Transistor |
| BU608D | Silicon NPN Power Transistor |