Datasheet Details
| Part number | BU810 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 160.36 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | BU810 Download (PDF) |
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| Part number | BU810 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 160.36 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | BU810 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high frequency and efficency converters, switching regulators and motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 400 5 7 10 2 75 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.66 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BU810 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A;
INCHANGE Semiconductor www.DataSheet4U.com isc Product Specification isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU810 | MEDIUM VOLTAGE NPN TRANSISTOR | ST Microelectronics |
| Part Number | Description |
|---|---|
| BU807 | Silicon NPN Power Transistor |