Datasheet Details
| Part number | BU912 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.60 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
 BU912 Datasheet
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| Part number | BU912 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.60 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
BU912 Datasheet
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.08 ℃/W BU912 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A;
IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Darlington Power Transistor.
| Part Number | Description |
|---|---|
| BU910 | Silicon NPN Darlington Power Transistor |
| BU920P | Silicon NPN Power Transistor |
| BU999 | Silicon NPN Power Transistor |