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BU912 Datasheet

Silicon NPN Darlington Power Transistor

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isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for applications such as electronic ignition, DC
and AC motor controls, solenoid drivers,etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1
A
60
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.08 /W
BU912
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BU912 Datasheet Preview

BU912 Datasheet

Silicon NPN Darlington Power Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2.5A; IB= 50mA
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 4A; IB= 0.2A
VCE= 500V; VBE= 0
VCE= 500V; VBE= 0,TC= 125
VCE= 450V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
VECF
C-E Diode Forward Voltage
IF= 4A
BU912
MIN TYP. MAX UNIT
450
V
1.8
V
1.8
V
2.2
V
2.5
V
1
5
mA
1 mA
5 mA
2.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BU912
Description Silicon NPN Darlington Power Transistor
Maker Inchange Semiconductor
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