Datasheet Details
| Part number | BU999 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.89 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU999 Download (PDF) |
|
|
Overview: isc Silicon NPN Power Transistor BU999.
| Part number | BU999 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.89 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU999 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min) ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICP Collector Current-Pulse 40 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 106 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU99901GUZ-W | WLCSP EEPROM | ROHM |
| Part Number | Description |
|---|---|
| BU910 | Silicon NPN Darlington Power Transistor |
| BU912 | Silicon NPN Darlington Power Transistor |
| BU920P | Silicon NPN Power Transistor |