BUJ302A - Silicon NPN Power Transistor

Description

High Voltage High Speed Switching APPLICATIONS

applications, converters, inverters, switching regulators, motor control systems, etc.

Inchange Semiconductor

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Part number	BUJ302A
Manufacturer	Inchange Semiconductor
File Size	189.61 KB
Description	Silicon NPN Power Transistor
Datasheet	BUJ302A Datasheet
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BUJ303A - Silicon NPN Power Transistor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUJ302A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Desined for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 2A ICM Collector Current-Peak 3A IB Base Current 0.75 A IBM Base Current-Peak Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 1 50 150 -65~150 A W ℃ ℃ isc website：www.iscsemi.

Published: Jun 26, 2016 |