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BUR54 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) High Current Capability Low Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 20A APPLICATIONS

and industrial equipment.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR54 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·High Current Capability ·Low Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 20A APPLICATIONS ·Designed for switching and linear applications in military and industrial equipment.