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Inchange Semiconductor

BUS132H Datasheet Preview

BUS132H Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUS132H
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter Voltage (VBE= 0)
850
V
VCEO Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
16 A
IB Base Current
6A
IBM Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
12
150
200
-65~200
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.17 /W
isc websitewww.iscsemi.cn
1




Inchange Semiconductor

BUS132H Datasheet Preview

BUS132H Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUS132H
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH
450
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
2.5 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
3.0 V
VBE(sat) Base-Emitter Saturation Voltage
ICEV Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= 5A; IB= 0.5A
VCE=VCESMmax;VBE=-1.5V
VCE=VCESMmax;VBE=-1.5V;TJ=100
VEB= 6V; IC= 0
1.5 V
0.25
1.5
mA
1.0 mA
hFE DC Current Gain
COB Output Capacitance
Switching Times , Resistive Load
IC= 8A ; VCE= 5V
IE= 0 ; VCB= 10V; ftest= 1kHz
7
350 pF
ton Turn-On Time
tstg Storage Time
tf Fall Time
IC= 5A ;IB1= 0.5A;IB2= -1.0A
0.4 μs
1.5 μs
0.1 μs
isc websitewww.iscsemi.cn
2


Part Number BUS132H
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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