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BUT11FI Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.

General Description

·High Voltage ·High Speed Switching · APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 850 400 9 5 10 2 4 35 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.57 UNIT ℃/W isc Website:www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 0.1A;

IB= 0 IC= 3A;

IB= 0.6A B BUT11FI MIN 400 TYP.