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BUV10 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.

General Description

·High Switching Speed ·High Current Capability APPLICATIONS ·Designed for high current,high speed,high power applications.

Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 160 160 140 125 7 25 30 6 150 200 -65~200 UNIT V V V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website:www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

BUV10 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A;