BUV19 Description
·Low Collector Saturation Voltage- : MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;.
BUV19 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
·Low Collector Saturation Voltage- : MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;.