Low Collector Saturation Voltage-
: VCE(sat)= 0.6V (Max.)@IC= 6A
High Power Dissipation
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min.)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in power s
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isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V (Max.)@IC= 6A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min.) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power switching applications in military
and industrial equipments.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCER VCEX VCEO
Collector-Base Voltage
Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.
BUV24 Datasheet
