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BUV37 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.

General Description

·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 10A APPLICATIONS ·Designed for use in automotive ignition circuits.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current - Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 400 8 15 30 4 100 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W isc Website:www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP BUV37 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A;

IB= 0;