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BUV39 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

BUV39 General Description

*Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 7.5A *High Switching Speed APPLICATIONS *Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=-1.5V Colle.

BUV39 Datasheet (111.76 KB)

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Datasheet Details

Part number:

BUV39

Manufacturer:

Inchange Semiconductor

File Size:

111.76 KB

Description:

Silicon npn power transistor.

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BUV39 Silicon NPN Power Transistor Inchange Semiconductor

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