Datasheet Details
| Part number | BUV39 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 111.76 KB |
| Description | Silicon NPN Power Transistor |
| Download | BUV39 Download (PDF) |
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Overview: www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.
| Part number | BUV39 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 111.76 KB |
| Description | Silicon NPN Power Transistor |
| Download | BUV39 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 7.5A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications.
Absolute maximum ratings(Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=-1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current- Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 160 90 7 25 45 6 9 120 200 -65~200 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.46 UNIT ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BUV39 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUV39 | Bipolar NPN Device | Seme LAB |
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