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BUV48A Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical.

They are particulary suited for line-operated swtchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCEX Collector-Emitter Voltage (VBE= -1.5V) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1000 V 450 V 7 V 15 A 30 A 5 A 20 A 150 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W BUV48A isc website www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;

IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;

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