BUV52A - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Current Capability Low Collector Saturation Voltage- : VCE(sat)= 0.9V (Max.) @IC= 7A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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BUV52A silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BUV52A
Manufacturer	Inchange Semiconductor
File Size	203.94 KB
Description	Silicon NPN Power Transistor
Datasheet	BUV52A Datasheet

Full PDF Text Transcription for BUV52A (Reference)

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isc Silicon NPN Power Transistor BUV52A DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.9V (Max.) @IC= 7A ·High Switching Speed ·Min...

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on Voltage- : VCE(sat)= 0.9V (Max.) @IC= 7A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.

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