Datasheet4U Logo Datasheet4U.com

BUW40A Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

Download the BUW40A datasheet PDF. This datasheet also includes the BUW40 variant, as both parts are published together in a single manufacturer document.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUW40 450 VCEV Collector-Emitter Voltage VBE= -1.5V BUW40A 550 V BUW40B 650 BUW40 300 VCEO(SUS) Collector-Emitter Voltage BUW40A 350 V BUW40B 400 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ BUW40/A/B isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUW40/A/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW40 BUW40A IC= 50mA ;

IB= 0 BUW40B V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;