BUW58 transistor equivalent, silicon npn power transistor.
*Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETE.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 160V(Min.)
*Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 15A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Desig.
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