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BUW70 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.) @IC= 4A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in clocked volt

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isc Silicon NPN Power Transistor BUW70 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.) ...

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100V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in clocked voltage converters.

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