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BUX31A Datasheet Preview

BUX31A Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistors
DESCRIPTION
High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUX31
= 450V (Min)-BUX31A
= 500V (Min)-BUX31B
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for off-line power supplies and are also well suited
for use in a wide range of inverter or converter circuits and
pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter
Voltage(VBE= 0)
BUX31
800
BUX31A
900
V
BUX31B 1000
VCEO
Collector-Emitter
Voltage
BUX31
400
BUX31A
450
V
BUX31B
500
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
5
A
150
W
200
Tstg
Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.0 /W
BUX31/A/B
·
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BUX31A Datasheet Preview

BUX31A Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BUX31
BUX31A IC= 50mA ; IB= 0
BUX31B
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A
VBE(sat)
ICBO
IEBO
Base-Emitter Saturation Voltage
Collector
Cutoff Current
BUX31
BUX31A
BUX31B
Emitter Cutoff Current
IC= 4A; IB= 0.8A
VCB= 800V; IB= 0
VCB= 800V; IB= 0,TC=125
VCB= 900V; IB= 0
VCB= 900V; IB= 0,TC=125
VCB= 1000V; IE= 0
VCB= 1000V; IE= 0,TC=125
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 4A ; VCE= 3V
BUX31/A/B
MIN TYP. MAX UNIT
400
450
V
500
1.0
V
2.0
V
1.3
V
0.1
1.0
0.1
1.0
mA
0.1
1.0
2
mA
8
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BUX31A
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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