isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BUX32
BUX32A IC= 50mA ; IB= 0
BUX32B
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat)
ICBO
IEBO
Base-Emitter Saturation Voltage
Collector
Cutoff Current
BUX32
BUX32A
BUX32B
Emitter Cutoff Current
IC= 6A; IB= 1.2A
VCB= 800V; IB= 0
VCB= 800V; IB= 0,TC=125℃
VCB= 900V; IB= 0
VCB= 900V; IB= 0,TC=125℃
VCB= 1000V; IE= 0
VCB= 1000V; IE= 0,TC=125℃
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 6A ; VCE= 3V
fT
Current-Gain—Bandwidth Product IC= 0.2A ;VCE= 10V
BUX32/A/B
MIN TYP. MAX UNIT
400
450
V
500
1.0
V
1.3
V
0.1
1.0
0.1
1.0
mA
0.1
1.0
2
mA
8
15
MHz
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our products.
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