Datasheet Details
| Part number | BUY52A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.03 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUY52A_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN Power Transistor BUY52A.
| Part number | BUY52A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.03 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUY52A_InchangeSemiconductor.pdf |
|
|
|
·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as: ·Switching regulators ·Motor control ·High frequency and efficiency converters Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V 60 V 7 V 30 A 45 A 8 A 150 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A;
| Part Number | Description |
|---|---|
| BUY55 | Silicon NPN Power Transistor |
| BUY56 | Silicon NPN Power Transistor |
| BUY57 | Silicon NPN Power Transistor |
| BUY58 | Silicon NPN Power Transistor |
| BUY24 | Silicon NPN Power Transistor |