BUY57 transistor equivalent, silicon npn power transistor.
*Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 125V(Min.)
*Low Collector Saturation Voltage-
: VCE(sat)= 1.3V@ IC= 10A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for g.
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