C2026 - 2SC2026

Datasheet Summary

Description

NF= 3.0dB TYP.

Gpe= 15dB TYP.

fT= 2.0GHz TYP.

band.

Inchange Semiconductor

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Datasheet Details

Part number	C2026
Manufacturer	Inchange Semiconductor
File Size	80.65 KB
Description	2SC2026
Datasheet	C2026 Datasheet
Additional preview pages of the C2026 datasheet.

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous Collector Power Dissipation PC @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range www.DataSheet4U.com 50 mA 0.25 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.

Published: May 2, 2011 |