Datasheet Details
| Part number | C3230 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 82.82 KB |
| Description | 2SC3230 |
| Download | C3230 Download (PDF) |
|
|
| Part number | C3230 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 82.82 KB |
| Description | 2SC3230 |
| Download | C3230 Download (PDF) |
|
|
|
·With TO-220 package ·Complement to type 2SA1276 ·Good linearity of hFE APPLICATIONS ·General purpose applications ·Cordless telephone tx final amplifier application for 1.7MHz system PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 30 30 5 3 -3 10 150 -55~150 UNIT V V V A A W ℃ ℃ Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IE=1mA ;IC=0 IC=2A ;IB=0.2 A IC=0.5A ;
VCE=2V VCB=20V;
IE=0 VEB=5V;
Inchange Semiconductor Product Specification Silicon NPN Power Transistors.
| Part Number | Description |
|---|