Datasheet Details
| Part number | C3514 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 103.66 KB |
| Description | 2SC3514 |
| Datasheet |
 C3514 Datasheet
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| Part number | C3514 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 103.66 KB |
| Description | 2SC3514 |
| Datasheet |
C3514 Datasheet
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 APPLICATIONS ·Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Collector Power Dissipation@TC=25℃ 10 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3514 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA;
IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 50mA;
IB= 5mA ICBO Collector Cutoff Current VCB= 180V;
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part Number | Description |
|---|---|
| C3563 | 2SC3563 |