Datasheet Details
| Part number | C5450 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.23 KB |
| Description | Silicon NPN Power Transistor |
| Download | C5450 Download (PDF) |
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| Part number | C5450 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.23 KB |
| Description | Silicon NPN Power Transistor |
| Download | C5450 Download (PDF) |
|
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·High Breakdown Voltage- : VCBO= 1600V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 10 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5450 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Coll
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5450.
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