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C5803 - 2SC5803

Description

High Breakdown Voltage: VCBO= 1500V (Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS

Designed for high voltage color display horizontal deflection output applications.

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    INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5803 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage www.DataSheet4U.com w w s c s i . w VALUE UNIT 1500 V 800 V 6 V 12 A 24 A 70 W n c . i m e IC Collector Current- Continuous ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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