Datasheet Details
| Part number | D1413 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 88.77 KB |
| Description | 2SD1413 |
| Download | D1413 Download (PDF) |
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Overview: Inchange Semiconductor Product Specification www.DataSheet4U.
| Part number | D1413 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 88.77 KB |
| Description | 2SD1413 |
| Download | D1413 Download (PDF) |
|
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|
·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1023 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 40 5 3 0.5 20 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification www.DataSheet4U.com Silicon NPN Power Transistors 2SD1413 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=25mA;
IB=0 IC=2A ;IB=4mA IC=2A ;IB=4mA VCB=60V;
IE=0 VEB=5V;
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