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D1912 - 2SD1912

Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) Wide Area of Safe Operation Low Collector Saturation Voltage APPLICATIONS

Designed for low frequency power amplifier applications.

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Full PDF Text Transcription

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ 8 A 1.75 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn Free FreeDatasheet Datasheethttp://www.datasheet4u.com/ http://www.
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