D209L Description
·High Collector-Emitter Breakdown Voltage- : IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V;.
- Part: D209L
- Manufacturer: Inchange Semiconductor (official site)
- Size: 198.23 KB
D209L is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
·High Collector-Emitter Breakdown Voltage- : IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V;.