Datasheet Details
| Part number | D209L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.23 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D209L-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor.
| Part number | D209L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.23 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D209L-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specification D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification D209L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 IEBO Emitter Cutoff Current VEB= 7V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
D209L | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | Jilin Sino |
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D209L | NPN Transistor | ATE |
| ETC | D209L | Low-frequency amplification shell rated bipolar transistors | ETC |
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D209L | High Voltage Fast Switching NPN Power Transistor | Winsemi |
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D2091 | 2SD2091 | Rohm |
| Part Number | Description |
|---|---|
| D2027 | 2SD2027 |