Datasheet Details
| Part number | D2236 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.08 KB |
| Description | 2SD2236 |
| Download | D2236 Download (PDF) |
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| Part number | D2236 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.08 KB |
| Description | 2SD2236 |
| Download | D2236 Download (PDF) |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1477 APPLICATIONS ·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 100 V wwwVCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 5A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2236 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Beakdown Voltage IC= 10mA;
INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product.
| Part Number | Description |
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