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D45VH1 Datasheet Silicon PNP Power Transistors

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistors D45VH Series.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D44VH Series ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching applications, such as switching regulators and high frequency inverters.

They are also well-suited for drivers for high power switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT D45VH 1 -50 VCEV Collector-Emitter Voltage D45VH 4 -70 V D45VH 7 -80 D45VH 10 -100 D45VH 1 -30 VCEO Collector-Emitter Voltage D45VH 4 -45 V D45VH 7 -60 D45VH 10 -80 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -20 A 83 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website:.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

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