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Inchange Semiconductor

D5011 Datasheet Preview

D5011 Datasheet

2SD5011

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www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD5011
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
3.5
A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
10 A
50 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/




Inchange Semiconductor

D5011 Datasheet Preview

D5011 Datasheet

2SD5011

No Preview Available !

www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD5011
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
ICBO Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE DC Current Gain
IC= 0.5A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 3.5A
fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
tf Fall Time
IC= 3A, IB1= 0.8A; IB2= -1.6A
RL= 66.7Ω;VCC= 200V
8.0 V
1.5 V
10 μA
40 130 mA
8
2.0 V
3 MHz
0.4 μs
isc Websitewww.iscsemi.cn
2
Datasheet pdf - http://www.DataSheet4U.net/


Part Number D5011
Description 2SD5011
Maker Inchange Semiconductor
PDF Download

D5011 Datasheet PDF





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