D5011
Overview
High Breakdown Voltage: VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode.
- Part: D5011
- Description: 2SD5011
- Manufacturer: Inchange Semiconductor
- Size: 144.76 KB
Datasheets by Manufacturer
- LC2-D5011xx — Telemecanique — Contactors
- LC1-D5011xx — Telemecanique — Contactors
- D5011UK — Seme LAB — METAL GATE RF SILICON FET
- LP1-D5011xx — Telemecanique — Contactors
- LC1-D5011xx — Telemecanique — Contactors
- LP1-D5011xx — Telemecanique — Contactors
- D5018UK — Seme LAB — METAL GATE RF SILICON FET
- D5012UK — Seme LAB — METAL GATE RF SILICON FET
- D5017UK — Seme LAB — GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET
- D5013UK — Seme LAB — ROHS COMPLIANT METAL GATE RF SILICON FET