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D649 - 2SD649

General Description

High Breakdown Voltage: VCBO= 1500V (Min) High Reliability APPLICATIONS

Designed for line-operated horizontal deflection output applications.

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage C www.DataSheet4U.com I Collector Current- Continuous w w s c s i . w 1500 1500 5 3 5 35 V V n c . i m e V A ICP Collector Current-Pulse A PC Collector Power Dissipation @ TC≤90℃ W TJ Junction Temperature 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc Website：www.iscsemi.