Datasheet Details
| Part number | D864 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.91 KB |
| Description | 2SD864 |
| Datasheet | D864-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor .. isc Silicon NPN Darlington Power Transistor isc Product.
| Part number | D864 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.91 KB |
| Description | 2SD864 |
| Datasheet | D864-InchangeSemiconductor.pdf |
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·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1.5A ·plement to Type 2SB765 APPLICATIONS ·Medium speed and power switching applications.
i.cnABSOLUTE MAXIMUM RATINGS (Ta=25℃) .iscsemSYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3A ICM Collector Current-Peak Collector Power Dissipation PC TC=25℃ Tj Junction Temperature 6A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn INCHANGE Semiconductor ..
isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD864 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
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