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FDB120N10 Datasheet N-channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor FDB120N10.

General Description

·motor drive, DC-DC converter, power switch and solenoid drive.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 74 A IDM Drain Current-Single Pluse 296 A PD Total Dissipation @TC=25℃ 170 W TJ Max.

Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.88 UNIT ℃/W isc website：.iscsemi.

Key Features

  • Drain Current : ID= 74A@ TC=25℃.
  • Drain Source Voltage : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDB120N10 N-Channel MOSFET Fairchild Semiconductor

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