HG2N60
HG2N60 is N-Channel Mosfet Transistor manufactured by Inchange Semiconductor.
INCHANGE Semiconductor isc N-Channel Mosfet Transistor
- Features
- Drain Current
- ID= 2A@ TC=25℃
- Drain Source Voltage-
: VDSS= 600V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements
- DESCRITION
- High efficiency switch mode power supply.
Charger UPS power supply.
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