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IPB120N10S4-05

Manufacturer: Inchange Semiconductor

IPB120N10S4-05 datasheet by Inchange Semiconductor.

IPB120N10S4-05 datasheet preview

IPB120N10S4-05 Datasheet Details

Part number IPB120N10S4-05
Datasheet IPB120N10S4-05-InchangeSemiconductor.pdf
File Size 356.78 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
IPB120N10S4-05 page 2

IPB120N10S4-05 Overview

·motor drive, DC-DC converter, power switch and solenoid drive. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pluse 480 A PD Total Dissipation @TC=25℃ 190 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c...

IPB120N10S4-05 Key Features

  • Drain Current : ID= 120A@ TC=25℃ -Drain Source Voltage

IPB120N10S4-05 from other manufacturers

View IPB120N10S4-05 datasheet index

Brand Logo Part Number Description Other Manufacturers
Infineon Logo IPB120N10S4-05 Power-Transistor Infineon
Inchange Semiconductor logo - Manufacturer

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