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IRF123 Datasheet N-Channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

General Description

·Drain Current ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 60 ±20 V V Drain Current-continuous@ TC=25℃ 7 A Total Dissipation@TC=25℃ 40 W Max.

Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.12 30 ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

Overview

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.