Datasheet Details
| Part number | IRF140 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.68 KB |
| Description | N-Channel MOSFET Transistor |
| Download | IRF140 Download (PDF) |
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| Part number | IRF140 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.68 KB |
| Description | N-Channel MOSFET Transistor |
| Download | IRF140 Download (PDF) |
|
|
|
·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·UPS,AC and DC motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 27 A ID Drain Current-continuous@ TC=100℃ 17 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W IRF140 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID=250uA VGS(TH) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF140 | N-Channel Power MOSFETs | Harris |
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IRF140 | N-Channel Power MOSFET | Seme LAB |
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IRF140 | N-Channel Power MOSFET | Intersil Corporation |
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IRF140 | N-Channel Power MOSFET | International Rectifier |
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IRF140 | N-Channel Power MOSFET | Fairchild Semiconductor |
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