Datasheet Details
| Part number | IRF141 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.44 KB |
| Description | N-Channel MOSFET Transistor |
| Download | IRF141 Download (PDF) |
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| Part number | IRF141 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.44 KB |
| Description | N-Channel MOSFET Transistor |
| Download | IRF141 Download (PDF) |
|
|
|
·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 60 ±20 V V Drain Current-continuous@ TC=25℃ 27 A Total Dissipation@TC=25℃ 125 W Max.
Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF141 | N-Channel Power MOSFETs | Harris |
| Part Number | Description |
|---|---|
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