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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF235
DESCRIPTION ·Drain Current –ID=6.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.68Ω(Max) ·Nanosecond Switching speeds
APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Drivers for high-power bipolar switching transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
250 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 8.1 A
Total Dissipation@TC=25℃
75 W
Max.