Datasheet Details
| Part number | IRF341 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.00 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 IRF341 Datasheet
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| Part number | IRF341 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.00 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
IRF341 Datasheet
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·Silicon Gate for Fast Switching Speed ·Rugged APPLICATIONS ·High voltage ·High speed application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 350 ±20 V V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 150 W Max.
Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.83 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF341 | N-Channel Power MOSFET | Fairchild Semiconductor |
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IRF341 | N-Channel Power MOSFET | Samsung semiconductor |
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IRF3415 | Power MOSFET | International Rectifier |
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IRF3415 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| IRF340 | N-Channel MOSFET Transistor |
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